Thermoelectric device

ABSTRACT

A thermoelectric device includes a plurality of thin-film thermoelectric elements. Each thin-film thermoelectric element is a Seebeck-Peltier device. The thin-film thermoelectric elements are electrically coupled in parallel with each other. The thermoelectric device may be fabricated using conventional semiconductor processing technologies and may be a thin-film type device.

BACKGROUND

1. Technical Field

This disclosure generally relates to thermoelectric devices and moreparticularly to thermoelectric devices having a respective electricalcurrent and a respective thermal gradient aligned approximately parallelor anti-parallel.

2. Description of the Related Art

Microprocessors, laser diodes, and other electronic devices generateheat during operation, which may adversely affect the performance ofthese devices. Electronic devices may be cooled by passive or activecooling systems. Passive cooling systems, which include heat sinks andheat pipes, dissipate heat. Design considerations in determining whetheran electronic device can be cooled by a passive cooling system includethe size requirement of the passive cooling system, the amount ofventilation at the passive cooling system, the operating temperature ofthe electronic device and the ambient temperature range where the devicewill be operated. Passive cooling systems might not be appropriate formany small electronic devices where the passive cooling system wouldrequire too much space or in devices where there is an insufficientamount of ventilation to dissipate the heat.

Active cooling systems may include refrigerators, e.g., mechanical vaporcompression refrigerators, and thermoelectric coolers. Refrigerationbased cooling systems generally require significant hardware such as acompressor, a condenser and an evaporator and require a relatively largeamount of space. In addition, refrigeration based cooling systemsinclude a large number of moving mechanical parts, which may be costlyand which may require maintenance. In many electronic devices, it wouldbe impractical and commercially non-viable to have refrigeration basedcooling systems. Consumers may avoid purchasing an electronic devicethat needs to be maintained.

Active cooling systems also include thermoelectric cooling systems suchas a Seebeck-Peltier (hereinafter “Seebeck”) device. Seebeck devicesprovide cooling (or heating) by passing an electrical current through athermoelectric device. A typical Seebeck thermoelectric device includesa layer of a Seebeck effect material, which conducts electricity, andanother layer of an electrical conductor. When a voltage is appliedacross the terminals of a Seebeck thermoelectric device, heat isabsorbed or produced at the interface of the Seebeck effect material andthe other electrical conductor, depending on the direction of theelectrical current flow.

Seebeck thermoelectric devices offer many advantages over refrigerationbased cooling systems. Seebeck thermoelectric devices may be relativelysmall, have no moving parts, may be operated in harsh environments suchas a vacuum, and may be operated in any orientation. Thus, Seebeckthermoelectric devices may be utilized for providing solid-state coolingof small electronic devices. However, current Seebeck thermoelectricdevices require cumbersome electrical connections and are not asefficient for their size as some of the other cooling systems.

There is a need for improved Seebeck thermoelectric devices.

BRIEF SUMMARY

In one aspect, a thermoelectric device includes a support structure anda plurality of thin-film thermoelectric elements. The support structureincludes electrically insulating frame members that have a number ofopenings. The thin-film thermoelectric elements are electrically coupledtogether in parallel. Each respective thin-film thermoelectric elementhas a respective electrically conductive member and a respective Seebeckeffect member that is electrically coupled to the respectiveelectrically conductive member, and each thin-film thermoelectricelement is at least partially positioned within a respective one of theplurality of openings.

In another aspect, a method of manufacturing a thermoelectric devicehaving multiple thin-film thermoelectric elements includes forming alayer of a first material at a plurality of thin-film thermoelectricelement locations on a generally planar first surface of a substrate;forming a layer of a second material over at least the layer of thefirst material at the plurality of thin-film thermoelectric elementlocations. The first material is either a Seebeck effect material or anelectrically conductive non-Seebeck effect material, and the secondmaterial is the other one of the Seebeck effect material or anelectrically conductive non-Seebeck effect material. The method furtherincludes physically isolating the respective layer of the first materialat a respective thin-film thermoelectric element location from therespective layer of the first material at all of the other thin-filmthermoelectric element locations for each thin-film thermoelectricelement location; physically isolating the respective layer of thesecond material at a respective thin-film thermoelectric elementlocation from the respective layer of the second material at all of theother thin-film thermoelectric element locations for each thin-filmthermoelectric element location; and electrically coupling a pluralityof thin-film thermoelectric elements in parallel, where each respectivethin-film thermoelectric element of the plurality of thin-filmthermoelectric elements is at a respective one of the plurality ofthin-film thermoelectric element locations, and each respectivethin-film thermoelectric element includes the respective layer of thefirst material and the respective layer of the second material at therespective thin-film thermoelectric element location.

In another aspect, a method of manufacturing a thermoelectric devicehaving a plurality of thin-film thermoelectric elements includes forminga respective opening in a first surface of a generally planar substrateat a first plurality of thin-film thermoelectric element locations; andleast partially filling each respective opening with a layer of a firstmaterial of a respective thin-film thermoelectric element, the firstmaterial being one of a Seebeck effect material or a first electricallyconductive non-Seebeck effect material. The method further includesproviding a layer of a second material of a respective thin-filmthermoelectric element material at each one of the first plurality ofthin-film thermoelectric element locations. The second material is thefirst electrically conductive non-Seebeck effect material when the firstmaterial is the Seebeck effect material, or the second material beingthe Seebeck effect material when the first material is the firstelectrically conductive non-Seebeck effect material. A respectivethin-film thermoelectric element includes the first material and thesecond material at the respective thin-film thermoelectric elementlocation of the respective thin-film thermoelectric element. The methodfurther includes providing a layer of a second electrically conductivenon-Seebeck effect material that physically couples the first pluralityof thin-film thermoelectric elements together, the second electricallyconductive non-Seebeck effect material physically connected to arespective bottom surface of each thin-film thermoelectric element ofthe first plurality of thin-film thermoelectric elements; and providinga layer of a third electrically conductive non-Seebeck effect materialthat physically couples the first plurality of thin-film thermoelectricelements together, the third electrically conductive non-Seebeck effectmaterial physically connected to a respective top surface of eachthin-film thermoelectric element of the first plurality of thin-filmthermoelectric elements.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a schematic side view of a thermoelectric device according toone embodiment.

FIG. 2 is a cross sectional view of a portion of the thermoelectricdevice of FIG. 1 according to one embodiment.

FIGS. 3A-3E are cross sectional views of portion of a thermoelectricdevice during various stages of manufacture according to one embodiment.

In the drawings, identical reference numbers identify identical elementsor elements in the same group and class. The sizes and relativepositions of elements in the drawings are not necessarily drawn toscale. For example, the shapes of various elements and angles are notnecessarily drawn to scale, and some of these elements are enlarged andpositioned to improve drawing legibility. Further, the particular shapesof the elements as drawn are not intended to convey any informationregarding the actual shape of the particular elements and have beenselected for ease of recognition in the drawings.

DETAILED DESCRIPTION

In the following description, certain specific details are set forth inorder to provide a thorough understanding of various disclosedembodiments. However, one skilled in the relevant art will recognizethat embodiments may be practiced without one or more of these specificdetails, or with other methods, components, materials, etc. Well-knownstructures associated with fabrication of semiconductor devices and/orwith thermoelectric devices have not been shown or described in detailto avoid unnecessarily obscuring descriptions of the preferredembodiments.

Unless the context requires otherwise, throughout the specification andclaims which follow, the word “comprise” and variations thereof, suchas, “comprises” and “comprising” are to be construed in an open,inclusive sense, for example “including, but not limited to.”

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure or characteristicdescribed in connection with the embodiment is included in at least oneembodiment. Thus, the appearances of the phrases “in one embodiment” or“in an embodiment” in various places throughout this specification arenot necessarily all referring to the same embodiment. Furthermore, theparticular features, structures, or characteristics may be combined inany suitable manner in one or more embodiments.

As used in this specification and the appended claims, the singularforms “a,” “an,” and “the” include plural referents unless the contentclearly dictates otherwise. The term “or” is generally employed in itssense including “and/or” unless the content clearly dictates otherwise.

The headings and Abstract of the Disclosure provided herein are forconvenience only and do not interpret the scope or meaning of theembodiments.

FIG. 1 is a schematic side view of a thermoelectric device 100 accordingto one embodiment. The thermoelectric device 100 has an upper thermalsurface 102 and a lower thermal surface 104. The upper thermal surface102 may have heat dissipating fins (not shown) in one embodiment. Thelower thermal surface 104 may be sized and shaped to thermally couple toa surface of an object (not shown). For example, the lower thermalsurface 104 may be generally flat or planar and sized to couple to orcontact a surface of a processor or micro-processor. Alternatively, thelower thermal surface 104 may curved and sized and shaped to couple toor contact a non-planar surface such as a cylindrical surface.

In some embodiments, the upper thermal surface 102 may be sized andshaped to have a surface area as large as or larger than the surfacearea of lower thermal surface 104 and may be sized and shaped toefficiently transfer thermal energy. For example, the upper thermalsurface 102 may include one or more fins, e.g., relatively thin stripsof a material such as a metal that extend outward from the upper thermalsurface 102.

The thermoelectric device 100 includes terminals 106 and 108, each ofwhich is connected to an electrical conductor 110, 112, respectively. Anelectrical current 114 is provided to the thermoelectric device 100 atthe upper terminal 106, via electrical conductor 110. The electricalcurrent 114 passes through the thermoelectric device 100 and exits atthe lower terminal 108, where the electrical current 114 is conductedaway from the thermoelectric device 100 via electrical conductor 112.

Passing the electrical current 114 through the thermoelectric device 100produces a thermal gradient 116 between the upper and lower thermalsurfaces 102, 104, respectively. In the embodiment shown in FIG. 1, thelower thermal surface 104 is at a temperature lower than the temperatureof the upper thermal surface 102. If the direction of the electriccurrent 114 is reversed such that the electric current 114 enters atterminal 108 and exits at terminal 106, then the direction of thethermal gradient 116 is reversed such that the lower thermal surface 104would be at a temperature higher than the temperature of the upperthermal surface 102.

The direction of the thermal gradient 116 relative to the direction ofcurrent flow depends at least in part on materials used in thethermoelectric device 100. In other words, if one class of materialssuch as n-type doped Seebeck effect materials are used, then thetemperature variations from higher to lower may be in the same directionof the as the current flow. However, if another class of materials suchas p-type doped Seebeck effect materials are used, then the temperaturevariations from higher to lower may be in the opposite direction of thecurrent flow.

FIG. 2 shows a cross-sectional view of a portion of the thermoelectricdevice 100 of FIG. 1. The dashed box 118 shown in FIG. 1 isrepresentative of the portion of the thermoelectric device 100 shown inFIG. 2.

The thermoelectric device 100 includes a plurality of thin-filmthermoelectric elements 120 and a support structure 122. The supportstructure 122 includes a plurality of frame members 124. The framemembers 124 are spaced apart, and a plurality of legs 126 interposeadjacent frame members 124. The support structure may be formed from asacrificial material such as a silicon wafer using various conventionalsemi-conductor fabricating processes.

The thermoelectric device 100 further includes a layer of a firstelectrical terminal material 128 that forms upper thermal surface 102 ofthe thermoelectric device 100, and a layer of a second electricalterminal material 130 that forms the bottom thermal surface 104 of thethermoelectric device 100. The first electrical terminal material 128and the second electrical terminal material 130 are electricallyconductive and may be a metal or metal alloy such as, but not limitedto, aluminum, copper, brass, etc.

A thin-film thermoelectric element 120 has an upper surface 132 and abottom surface 134. The upper surface 132 and bottom surface 134 aregenerally planar and are approximately parallel to each other. Each oneof the upper surface 132 and the bottom surface 134 has a respectivesurface area in the range of 25-2500 m².

A thin-film thermoelectric element 120 includes a layer of a firstelectrically conductive material 136, and a layer of a Seebeck effectmaterial 138. The layer of the first electrically conductive material136 may have a thickness in the range of 0.5-5 m, and the Seebeck effectlayer 138 may have a thickness in the range of 2,000-20,000 angstroms.The first electrically conductive material 136 may be a metal such ascopper, aluminum, gold, and silver and/or other metals or metal alloys.The layer of the first electrically conductive material 136 may bedisposed in an opening 140 and may extend between adjacent frame members124.

The frame members 124 may be formed from an electrically insulativematerial and may be formed such that the first electrically conductivematerial 136 of one thin-film thermoelectric element 120 is physicallyisolated from all other thin-film thermoelectric elements 120 by variousframe members 124. The amount of the first electrically conductivematerial 136 deposited in one of the openings 140 is generallysufficient to at least partially or completely fill the respectiveopening 140 with the first electrically conductive material 136.

The Seebeck effect material 138 is a material such as p-type or n-typedoped material, such as, but not limited to, Tellurium. All of theSeebeck effect material 138 is doped with the same type of dopant.Namely, it is either all P-type or N-type. This permits the Seebeckeffect material to be doped in a single step, such as when they arefirst deposited or after they are formed and doped with a blanketimplant. This saves process steps and cost as compared to havingadjacent Seebeck effect material doped with opposite conductivity typewith respect to each other. Other Seebeck effect materials may be foundin U.S. Publication 2005/0150536.

In some embodiments, a thin-film thermoelectric element 120 may includea layer of an optional electrically conductive barrier material 142interposing the Seebeck effect material 138 and the first electricallyconductive material 136. Depending on materials selected for the firstelectrically conductive material 136 and the Seebeck effect material138, there may be an undesirable interaction such as a chemical reactionand/or electromigration therebetween. The electrically conductivebarrier layer 142, if present, will coat a top surface of the firstelectrically conductive material 136 (and/or a bottom surface of theSeebeck effect material 138) so as to prevent and/or inhibit undesirableinteractions between the Seebeck effect material 138 and the firstelectrically conductive material 136. The electrically conductivebarrier layer 142, if present, may be substantially chemically inertwith one or the other or both of the Seebeck effect material 138 and thefirst electrically conductive material 136.

Similarly, the materials selected for the first electrical terminalmaterial 128 and the Seebeck effect material 138 may undesirablyinteract. In that case, a layer of an electrically conductive barriermaterial 144 may interpose the first electrical terminal material 128and the Seebeck effect material 138. The electrically conductive barriermaterial 144, if present, will coat an upper surface of the Seebeckeffect material 138 (and/or a bottom surface of first electricalterminal material 128) so as to prevent and/or inhibit undesirableinteractions between the Seebeck effect material 138 and the firstelectrical terminal material 128. In that case, the electricallyconductive barrier material 144 forms the upper surface 132 of thethin-film thermoelectric element 120. The electrically conductivebarrier layer 144, if present, may be substantially chemically inertwith one or the other or both of the Seebeck effect material 138 and thefirst electrical terminal material 128.

Nonlimiting examples of materials that may be used for the electricallyconductive barrier materials 142, 144 include Ta, TaN, Pt, and TiW. Theelectrically conductive barrier layer 142, 144 are generally a thinfilm, if present in the thermoelectric device 100.

The thermoelectric device 100 further includes a plurality of frame caps146. The frame caps 146 extend generally transversely and longitudinallyabove the frame members 124. The frame caps 146 may be formed and shapedsuch that the Seebeck effect material 138 of one thin-filmthermoelectric element 120 is physically isolated from all otherthin-film thermoelectric elements 120. The frame caps 146 may be anelectrically insulative material such as, but not limited to, silicondioxide, silicon nitride, polyimide, etc.

The layer of the first electrical terminal material 128 is disposed overthe thin-film thermoelectric elements 120 and generally over the supportstructure 122 including the frame caps 146. The first electricalterminal material 128 electrically couples each thin-film thermoelectricelement 120 of the thermoelectric device 100 in parallel at therespective upper surfaces 132. The first electrical terminal material128 may be a metal such as aluminum, copper, gold, silver, brass alloy,or other electrical conductor.

The support structure 122 includes a plurality of openings 148. Arespective opening extends between adjacent legs 126 or between a framemember 124 and a leg 126 adjacent thereto. The layer of the secondelectrical terminal material 130 is disposed beneath the supportstructure 122 and fills the plurality of openings 148. The secondelectrical terminal material 130 is in physical and electrical contactwith the bottom surface 134 of each thin-film thermoelectric element120. The second electrical terminal material 130 electrically coupleseach thin-film thermoelectric element 120 of the thermoelectric device100 in parallel at the respective bottom surfaces 134.

FIGS. 3A-3E show a process for manufacturing a thermoelectric device 100according to one embodiment. The thermoelectric device 100 may be formedusing conventional semiconductor processing techniques such as, but notlimited to, physical vapor deposition, chemical vapor deposition, e-beamevaporation, contact lithography, UV stepper, masking, and etching,e.g., plasma etch, wet etch.

A substrate 200 such as an undoped silicon wafer is shown in FIG. 3A.The substrate 200 includes a first surface 202 and a second surface 204.Prior to patterning the substrate 200, the first and second surfaces202, 204 are generally parallel and planar. After patterning thesubstrate 200, the first surface 202 has a plurality of thin-filmthermoelectric element locations 206 formed therein. Each thin-filmthermoelectric element location 206 includes recesses 140 extending fromthe first surface 202 inward toward the second surface 204 of thethin-film thermoelectric element. The openings 140 may be formed in thesubstrate 200 via conventional semiconductor fabrication processes suchas chemical etching.

The recesses 140 are etched into the substrate to a desired depth. Afterthe recesses 140 have been formed in the substrate 200, a layer of thefirst electrically conductive material 136 is formed over the substrate200 at least partially filling each opening 140 and covering the firstsurface 202 of the substrate 200. In one embodiment, the firstelectrically conductive material 136 completely fills each one of theopenings 140. Portions of the first electrically conductive material 136are selectively removed such as by chemical mechanical polishingprocessing so that each portion of the first electrically conductivematerial 136 in a respective opening 140 is electrically and physicallyisolated from all other portions of first electrically conductivematerial 136 in other openings 140.

As shown in FIG. 3B, a layer of the Seebeck effect material 138 isformed over the etched electrically conductive material 136. The Seebeckeffect material 138 covers the first surface 202 of the substrate 200and the remaining portions of the first electrically conductive material136. Portions of the Seebeck effect material 138 are selectively removedsuch that the Seebeck effect material 138 at a respective thin-filmthermoelectric element location 206 is physically isolated from theSeebeck effect material 138 at adjacent thin-film thermoelectric elementlocations 206, as shown in FIG. 3C.

In some embodiments, after patterning the first electrically conductivematerial 136 and prior to forming the layer of the Seebeck effectmaterial 138, a layer of the electrically conductive barrier material142 (see FIG. 2) may be formed over the substrate 200 so as to cover thepatterned electrically conductive material 136 and the exposed portionsof the first surface 202 of the substrate 200. The layer of theelectrically conductive barrier material 142 is then patterned such thatselective portions of the electrically conductive barrier material 142are removed. The removed portions generally correspond to portions ofthe electrically conductive barrier material 142 outside of therespective thin-film thermoelectric element locations 206. Then, thelayer of the Seebeck effect material 138 is formed over the wafer 200.

As shown in FIG. 3C, after patterning and removing portions of the layerof the Seebeck effect material 138, a layer of an electricallyinsulative material 216 is formed over the wafer 200. The electricallyinsulative layer 216 may be a material such as a polyimide or silicondioxide or silicon nitride or other electrically insulative materials.Portions of the electrically insulative layer 216 are selectivelyremoved. The removed portions are generally removed from inside of thethin-film thermoelectric element locations 206. The layer of theelectrically insulative material 216 is patterned and etched to form theframe caps 146 (see FIG. 3D).

As shown in FIG. 3D, after forming the frame caps 146, the layer of thefirst electrical terminal material 128 is formed over the wafer 200. Thefirst electrical terminal material 128 is in physical and electricalcontact with the Seebeck effect material 138 at each thin-filmthermoelectric element location 206 in one embodiment.

In some embodiments, after forming the frame caps 146 and prior toforming the layer of the first electrical terminal material 128, a layerof a barrier material 144 (see FIG. 2) may be formed over the substrate200 thereby covering the frame caps 146 and the exposed portions of theSeebeck effect material 138. The layer of the barrier material 144 isthen patterned such that selective portions of the barrier material 144are removed. The removed portions generally correspond to portions ofthe barrier material outside of respective thin-film thermoelectricelement locations 206. Then, the first electrical terminal material 128is formed over the wafer 200. In this embodiment, the barrier material144 provides electrical contact between the Seebeck material 138 and theconductive layer 128.

As shown in FIG. 3E, the second surface 204 of the substrate 200 ispatterned and selective portions of the substrate 200 are removedtherefrom to form the openings 148, which extend from the second surface204 of the substrate 200 to the thin-film thermoelectric elementlocation bottom surface 134 of the respective thin-film thermoelectricelement locations 206. After the openings 148 are formed, the layer ofthe second electrical terminal material 130 is formed. The secondelectrical terminal material 130 covers the second surface 204 of thesubstrate 200 and at least partially fills the openings 148. The secondelectrical terminal material 130 electrically couples together therespective bottom surfaces 134 of the thin-film thermoelectric elements120 together. In operation, current flows from the back electricalterminal 130 to the front electrical terminal 128. Electrical voltageconnections are provided (not shown) to cause current to flow in thisdirection. Heat therefore flows from the front to the back, causing thetop to cool and the back to heat for a P-type Tellurium Seebeckmaterial. If it is desired to have the bottom cool and the top to heat,the direction of the current can be reversed or the Seebeck material canbe doped N-type.

By having only one doping type of Tellurium, a larger portion of thewafer is Tellurium and efficient cooling is achieved. Much fewer maskingsteps are also needed than if two types of doped Tellurium are used andthe electrical terminals are both on the top surface.

The above description of illustrated embodiments, including what isdescribed in the Abstract, is not intended to be exhaustive or to limitthe embodiments to the precise forms disclosed. Although specificembodiments of and examples are described herein for illustrativepurposes, various equivalent modifications can be made without departingfrom the spirit and scope of the disclosure, as will be recognized bythose skilled in the relevant art.

The various embodiments described above can be combined to providefurther embodiments. To the extent that they are not inconsistent withthe specific teachings and definitions herein, all of the U.S. patents,U.S. patent application publications, U.S. patent applications, foreignpatents, foreign patent applications and non-patent publicationsreferred to in this specification and/or listed in the Application DataSheet are incorporated herein by reference, in their entirety. Aspectsof the embodiments can be modified, if necessary, to employ systems andconcepts of the various patents, applications and publications toprovide yet further embodiments.

These and other changes can be made to the embodiments in light of theabove-detailed description. In general, in the following claims, theterms used should not be construed to limit the claims to the specificembodiments disclosed in the specification and the claims, but should beconstrued to include all possible embodiments along with the full scopeof equivalents to which such claims are entitled. Accordingly, theclaims are not limited by the disclosure.

1. A thermoelectric device, comprising: a support structure havingelectrically insulating frame members defining a plurality of openings;a plurality of thin-film thermoelectric elements electrically coupledtogether in parallel, each respective thin-film thermoelectric elementhaving a respective electrically conductive member and a respectiveSeebeck effect member that is electrically coupled to the respectiveelectrically conductive member, and each thin-film thermoelectricelement is at least partially positioned within a respective one of theplurality of openings; a first electrode electrically coupling theelectrically conductive members to each other; and a second electrodeelectrically coupling the Seebeck effect members to each other, whereinthe second electrode is a continuous material over the Seebeck effectmembers and each of the thin-film thermoelectric elements are positionedbetween the first and second electrodes.
 2. The thermoelectric device ofclaim 1, wherein: the first electrode directly contacts each of theelectrically conductive members and the second electrode directlycontacts each of the Seebeck effect members.
 3. The thermoelectricdevice of claim 1, wherein: each respective thin-film thermoelectricelement has generally planar opposed first and second surfaces, therespective first surfaces being generally aligned in a first plane, therespective second surfaces being generally aligned in a second planethat is generally parallel to the first plane; the first electrodecovers the respective first surface of each respective thin-filmthermoelectric element and is electrically coupled thereto, and thesecond electrode covers the respective second surface of each respectivethin-film thermoelectric element and electrically couples the respectivesecond surfaces of the plurality of thin-film thermoelectric elementstogether.
 4. The thermoelectric device of claim 1, wherein therespective Seebeck effect member of each respective thin-filmthermoelectric element is a p-doped material.
 5. The thermoelectricdevice of claim 1, wherein the respective Seebeck effect member of eachrespective thin-film thermoelectric element is an n-doped material. 6.The thermoelectric device of claim 1, wherein the respectiveelectrically conductive member of each respective thin-filmthermoelectric element is received by the respective opening, andwherein each respective electrically conductive member is physicallyseparated from all other respective thin-film thermoelectric elements byat least one of the electrically insulating frame members of the supportstructure.
 7. The thermoelectric device of claim 1, wherein for eachthin-film thermoelectric element: the electrically conductive member ofthe thin-film thermoelectric element is positioned between the firstelectrode and the Seebeck effect member of the thin-film thermoelectricelement; and the Seebeck effect member of the thin-film thermoelectricelement is positioned between the second electrode and the electricallyconductive member of the thin-film thermoelectric element.
 8. Athermoelectric device, comprising: a plurality of thin-filmthermoelectric elements, each respective thin-film thermoelectricelement having a respective electrically conductive member and arespective Seebeck effect member that is electrically coupled to therespective electrically conductive member; a plurality of isolatingstructures physically isolating thin-film thermoelectric elements fromeach other; and first and second electrodes electrically coupling thethin-film thermoelectric elements in parallel, the first electrodeelectrically coupling the electrically conductive members to each otherand the second electrode electrically coupling the Seebeck effectmembers to each other and wherein the second electrode is a continuousmaterial on the plurality of Seebeck effect members, each of thethin-film thermoelectric elements being positioned between the first andsecond electrodes.
 9. The thermoelectric device of claim 8, furthercomprising: a barrier layer positioned between the electricallyconductive member and the Seebeck effect member of one of the thin-filmthermoelectric elements, the barrier layer being substantiallychemically inert with at least one of the electrically conductive memberand the Seebeck effect member of the one of the thin-film thermoelectricelements.
 10. The thermoelectric device of claim 8, wherein: theelectrically conductive members are positioned on a first surface of asubstrate; and the first electrode includes a plurality of portionsextending completely through the substrate from a second surface to thefirst surface, the portions of the first electrode contacting respectivebottom surfaces of the electrically conductive members.
 11. Thethermoelectric device of claim 8, wherein for each thin-filmthermoelectric element: the electrically conductive member of thethin-film thermoelectric element is positioned between the firstelectrode and the Seebeck effect member of the thin-film thermoelectricelement; and the Seebeck effect member of the thin-film thermoelectricelement is positioned between the second electrode and the electricallyconductive member of the thin-film thermoelectric element.
 12. Athermoelectric device, comprising: a substrate having a first surfacewith a plurality of first openings at a plurality of thin-filmthermoelectric element locations, respectively; first material portionsof respective thin-film thermoelectric elements in the first openings,respectively, the first material portions being of a Seebeck effectmaterial or an electrically conductive non-Seebeck effect material;second material portions of the respective thin-film thermoelectricelements at the plurality of thin-film thermoelectric element locations,respectively, the second material portions being of the electricallyconductive non-Seebeck effect material if the first material conductiveportions are of the Seebeck effect material, and the second materialportions being of the Seebeck effect material if the first materialportions are of the electrically conductive non-Seebeck effect material;a first conductive electrode layer that physically and electricallycouples the plurality of thin-film thermoelectric elements together, thefirst conductive electrode layer being physically and electricallycoupled to respective bottom surfaces of the thin-film thermoelectricelements; and a second conductive electrode layer that physically andelectrically couples the plurality of thin-film thermoelectric elementstogether and contacts the thin-film thermoelectric elements, the secondconductive electrode layer being a continuous material and is physicallyand electrically coupled to respective top surfaces of the plurality ofthin-film thermoelectric elements, and each thin-film thermoelectricelement being positioned between the first and second conductiveelectrode layers.
 13. The thermoelectric device of claim 12, wherein thesubstrate includes a plurality of second opening extending through thesubstrate at the plurality of thin-film thermoelectric elementlocations, respectively.
 14. The thermoelectric device of claim 12,wherein the second conductive electrode layer includes leg portionsextending through the second openings, respectively, the leg portionscontacting the first material portions, respectively.
 15. Thethermoelectric device of claim 12, further comprising: a barrier layerpositioned between the first and second material portions of one of thethin-film thermoelectric elements, the barrier layer being substantiallychemically inert with at least one of the first and second materialportions of the one of the thin-film thermoelectric elements.
 16. Thethermoelectric device of claim 12, wherein for each thin-filmthermoelectric element: the first material portion of the thin-filmthermoelectric element is positioned between the first conductiveelectrode layer and the second material portion of the thin-filmthermoelectric element; and the second material portion of the thin-filmthermoelectric element is positioned between the second conductiveelectrode layer and the first material portion of the thin-filmthermoelectric element.